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> Energy band gap > GaAs  Al_{x}Ga_{1x}As  In_{x}Ga_{1x}As  
> Refractive index > GaAs  AlAs  Al_{x}Ga_{1x}As  In_{x}Ga_{1x}As  
> Devices > Bragg mirror  SAM  RSAM  SOC  PCA  
Refractive index n of AlAs 

>  Contents  


>  Equation  
According to Sadao Adachi J. Appl. Phys. Vol. 58, No.3, (1985) R1 the real part of the refractive index n of AlAs below the band gap edge can be expressed by: 

eq.(1)  
with  
In this equation the symbols and constants have the following meaning in the case of AlAs at room temperature:  
n  (real part) of the refractive index  
l  wavelength in the vacuum  
h = 6.626 10 ^{34} Js  Planck´s constant  
c = 2.998 10^{8} m/s  speed of light in the vacuum  
hc/l  photon energy  
A_{0} = 25.3  constant, determined by fitting with experimental data  
B_{0} =  0.8  constant, determined by fitting with experimental data  
E_{0} = 2.95 eV  fundamental band gap at Gpoint  
E_{0} + D _{0} = 3.25 eV  with D_{0} spinorbit splitting energy  
>  Numerical values  
Refractive index n of AlAs calculated with eq. (1) 


