Growth of semiconductor optoelectronic and electronic devices
We grow for you high quality epitaxial thin film stacks using the materials AlAs, GaAs, InAs, AlGaAs, AlInAs and InGaAs for different applications on GaAs wafers. The available wafer sizes are 2" (50.8 mm) or 4" (100 mm) diameter with a maximum film stack thickness up to 5 µm.
For some applications fast time response devices are needed, such as
optical detectors, saturable absorbers
or photoconductive antennas.
We offer low temperature epitaxial growth of devices with short response time ~ 1 ps.
Reference prices for custom designs
The prices below are for a single layer with a total thickness of 2 µm grown on GaAs substrate.
For custom thin film requests please send us your inquiry including design details.
4" LT-GaAs wafer with customized metal structures